LAUSR

Quantum dot light-emitting diodes (QLEDs) are one of the most promising candidates for the next-generation displays and lighting sources but merely used, because vulnerability to electrical and thermal stresses precludes high brightness, efficiency and stability at high current density (J) regimes. Here we demonstrate bright and stable QLEDs on a Si substrate expanding their potential application boundary over the present art. First, we grant tailored interface to quantum dots maximizing quantum yield and mitigating nonradiative Auger decay of multi-excitons generated at the high J regimes. Second, a heat endurable, top-emission device architecture is employed and optimized based on optical simulation to enhance the light outcoupling efficiency. Our multi-lateral approaches realize that the red top-emitting QLEDs exhibit a maximum luminance of 3,300,000 cd m-2 , a current efficiency of 75.6 cd A-1 , and an operational lifetime of 125,000,000 h at an initial brightness of 100 cd m-2 , which are the highest of the values reported so far. This article is protected by copyright. All rights reserved.