LAUSR

Abstract This study demonstrates quantum-dot light-emitting diodes (QD-LEDs) with a function of resistive switching memory, capable of on/off operation at the same driving current depending on reset/set state. The QD-LEDs were fabricated by spin-coating process and experienced two different annealing conditions, which yielded defective or less-defective V2O5–x layer. One of the annealing conditions produced QD-LEDs with the unusual electrical behaviors of negative differential resistance (NDR), capacitance oscillation, and voltage–current hysteresis curves, signifying so-called resistive switching characteristics. X-ray and ultraviolet photoelectron spectroscopies were used to examine the chemical state of the differently annealed V2O5–x layers. The less stoichiometric V2O5–x layer was found to be responsible for the resistive switching behaviors of the NDR and the low and high resistance states (LRS and HRS, respectively). We discuss the LRS/HRS of V2O5–x for resistive switching in terms of a conductive filament effect, induced by microstructural changes caused by oxygen drift and vacancy annihilation processes in the high defect density V2O5–x layer.