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Synthesis of δ-Ta2O5 heteroepitaxial films on YVO4 (100) substrates

Abstract Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited… Click to show full abstract

Abstract Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%.

Keywords: synthesis ta2o5; ta2o5; films yvo4; ta2o5 heteroepitaxial; heteroepitaxial films; yvo4 100

Journal Title: Materials Science in Semiconductor Processing
Year Published: 2021

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