LAUSR

Abstract Three aryl vinyl terminated 9-fluorenone compounds (pMe-DEPFO, DEPFO and F5-DEPFO) were designed and synthesized. The single crystal structure of pMe-DEPFO shows that the molecule has a good planarity and packs orderly, which is crucial for the charge transport. The optical and electrochemical properties indicate that aryl end groups with different electron push-pull effect can adjust the molecular HOMO and LUMO energy levels (EHOMO: -5.14∼-5.53 eV; ELUMO: -2.91∼-3.13 eV), which lead to different energy gaps (Egopt: 2.23∼2.40 eV). The “Al/fluorenone/ITO” devices of pMe-DEPFO and DEPFO both exhibit excellent non-volatile flash memory property with high ON/OFF ratios (∼104 and 106). In contrast, F5-DEPFO-based device displays WORM memory behavior with high ON/OFF ratio (∼105). The experimental and theoretical calculation results confirm that the adjustment of molecular end groups leads to the different of film-forming ability, which tuned the resistive memory behavior.