LAUSR

Engineered point defects in two-dimensional (2D) materials offer an attractive platform for solid-state devices that exploit tailored opto-electronic, quantum emission, and resistive properties. Naturally occurring defects are also unavoidably important contributors to material properties and performance. The immense variety and complexity of possible defects makes it challenging to experimentally control, probe, or understand atomic-scale defect-property relationships. Here, we develop an approach based on deep transfer learning, machine learning, and first-principles calculations to rapidly predict key properties of point defects in 2D materials. We use physics-informed featurization to generate a minimal description of defect structures and present a general picture of defects across materials systems. We identify over one hundred promising, unexplored dopant defect structures in layered metal chalcogenides, hexagonal nitrides, and metal halides. These defects are prime candidates for quantum emission, resistive switching, and neuromorphic computing.