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Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films

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The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized u... Click to show full abstract

The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized u...

Keywords: nitrogen; thin films; plasma; plasma assisted; ingan thin; nitrogen plasma

Journal Title: AIP Advances
Year Published: 2019

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