Photo from archive.org
The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density.… Click to show full abstract
The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters under optimal conditions (at a distance of 2 mm from the discharge) is about 0.5 μm, and the deposition density is 3–5 clusters per squared μm.
Keywords:
metal porous;
film arc;
porous film;
generation metal;
discharge;
film
Journal Title: High Temperature
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: High Temperature
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!