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The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in… Click to show full abstract
The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
Keywords:
magnetic fields;
based bismuth;
transport properties;
films based;
heteroepitaxial films;
properties heteroepitaxial
Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2017
Link to full text (if available)
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recommendations!