Recently, two-dimensional materials were widely studied as candidates for new generation of photodetectors. In this paper, we reported on the fabrication and the optoelectronic characterizations of p-type gallium selenide (GaSe)… Click to show full abstract
Recently, two-dimensional materials were widely studied as candidates for new generation of photodetectors. In this paper, we reported on the fabrication and the optoelectronic characterizations of p-type gallium selenide (GaSe) back-gated field effect transistor based photodetector. The phototransistor showed excellent gate control capability with an ION/IOFF value exceeding 103. The photoresponsivity can be easily tunable to maximum value of 1.4 AW–1 by changing the gate voltage, however, the photodetector showed the best performance at gate voltage of −18V, with photoresponsivity, external quantum efficiency and detectivity of 0.9 AW–1, 210% and 8.08 × 1011 cmHz0.5W–1, respectively.
Journal Title: Optical Materials Express
Year Published: 2017
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