In this study, the failure mechanisms of Cu-Cu joints under thermal cycling were investigated. Two structures of dielectrics (PBO/underfill/PBO and SiO2) were employed to seal the joints. Stress gradients induced… Click to show full abstract
In this study, the failure mechanisms of Cu-Cu joints under thermal cycling were investigated. Two structures of dielectrics (PBO/underfill/PBO and SiO2) were employed to seal the joints. Stress gradients induced in the joints with the different dielectrics were simulated using a finite element method (FEM) and correlated with experimental observations. We found that interfacial voids were forced to move in the direction from high stress regions to low stress ones. The locations of migrated voids varied with the dielectric structures. Under thermal cycling, such voids were likely to move forward to the regions with a small stress change. They relocated and merged with their neighboring voids to lower the interfacial energy.
               
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