The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
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DOI: 10.1016/j.mssp.2020.105527
Abstract: Abstract This letter reports on the improvement of a SiO2 layer formed by atomic layer deposition on 4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to a… read more here.
Keywords: improvement; layer; atomic layer; forming gas ... See more keywords