Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
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DOI: 10.1063/1.5017965
Abstract: Laser diodes employing a strain-compensated GaAs1−xBix/GaAs1−yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE… read more here.
Keywords: characteristics omvpe; omvpe grown; thermal annealing; growth ... See more keywords