p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements.
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DOI: 10.1021/acs.nanolett.6b04560
Abstract: GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was… read more here.
Keywords: nanowires characterized; gan nanowires; type doping; doping gan ... See more keywords