Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling
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DOI: 10.1109/jeds.2019.2910077
Abstract: Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate- and surface-normal-scaling functions were determined based on the reported experimental results. Simulated… read more here.
Keywords: vapor deposition; sic chemical; trench filling; chemical vapor ... See more keywords