A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation
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DOI: 10.1063/1.5001203
Abstract: We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see… read more here.
Keywords: electrical defects; study process; ion implantation; related electrical ... See more keywords