Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
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DOI: 10.1109/jeds.2020.2987005
Abstract: In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not… read more here.
Keywords: cmos inverter; fefets cmos; gas annealing; forming gas ... See more keywords