Fast operation of a WO3-based solid-state electrochromic transistor
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5089604
Abstract: Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed so far, their… read more here.
Keywords: solid state; fast operation; state; gate source ... See more keywords
Novel Design Approach of Extended Gate-On-Source Based Charge-Plasma Vertical-Nanowire TFET: Proposal and Extensive Analysis
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DOI: 10.1109/tnano.2020.2993565
Abstract: While quenching the thirst of device scaling, it is utmost necessary not to compromise device performance. Thus, the scaling of tunnel devices is much efficient as compared to Field-Effect Transistors. A dopingless Nanowire (NW) Tunnel… read more here.
Keywords: tfet; source; gate source; charge ... See more keywords
Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference
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DOI: 10.3390/en13061421
Abstract: Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power… read more here.
Keywords: gate source; pwm; source voltage; voltage interference ... See more keywords