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Published in 2017 at "Protection of Metals and Physical Chemistry of Surfaces"
DOI: 10.1134/s2070205117020095
Abstract: Dielectric films of hydrogenated silicon oxycarbonitride SiCxNyOz:H were prepared by plasmaenhanced chemical vapor deposition using gas mixtures of 1,1,1,3,3,3-hexamethyldisilazane (HMDS) or 1,1,3,3-tetramethyldisilazane (TMDS) with oxygen and nitrogen in the temperature range of 373–973 K. The…
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Keywords:
synthesis composition;
silicon oxycarbonitride;
conditions synthesis;
influence conditions ... See more keywords