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Published in 2019 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2019.01.012
Abstract: Abstract We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis…
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Keywords:
thin films;
photoluminescence linewidth;
linewidth narrowing;
gan ingan ... See more keywords
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5020988
Abstract: The optical properties of thick InGaN epilayers, with compositions spanning the entire ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) films were grown heteroepitaxially by radio-frequency plasma assisted molecular-beam epitaxy…
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Keywords:
thin films;
range;
properties ingan;
optical properties ... See more keywords
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Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5126943
Abstract: The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized u...
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Keywords:
nitrogen;
thin films;
plasma;
plasma assisted ... See more keywords
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Published in 2023 at "Materials"
DOI: 10.3390/ma16051890
Abstract: Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching…
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Keywords:
anisotropic etching;
quantum dots;
thin films;
etching ingan ... See more keywords