Intrinsic origin of electron scattering at the 4 H -SiC(0001)/SiO 2 interface
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DOI: 10.1103/physrevb.95.041302
Abstract: We introduce a first-principles study to clarify the carrier-scattering property at the $\mathrm{SiC}/{\mathrm{SiO}}_{2}$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no electrically… read more here.
Keywords: mathrm sio; intrinsic origin; origin electron; electron scattering ... See more keywords