Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.
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DOI: 10.1021/acsami.8b22569
Abstract: A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n+ type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type… read more here.
Keywords: broad band; photodetector; self; powered broad ... See more keywords