Ultra-flat AlN grown with a pulsed H2 etching condition
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DOI: 10.7567/1882-0786/aaf5c2
Abstract: A 1.5 μm AlN epilayer with a root-mean-square surface roughness of 0.25 nm was grown by metal-organic chemical vapor deposition at the single substrate temperature below 1200 °C. The ultra-flat surface is achieved with 30… read more here.
Keywords: grown pulsed; aln grown; ultra flat; aln ... See more keywords