LAUSR

Lattice-alignment mechanism of SiGe on Sapphire

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0 Published in 2018 at "Acta Materialia"

DOI: 10.1016/j.actamat.2017.11.031

Abstract: Abstract Heteroepitaxy of silicon germanium (SiGe) prepared on a sapphire substrate (Al 2 O 3 ) requires scrupulous attention to growth conditions. Previous work was used a substrate temperature of 890 ° C to grow… read more here.

Keywords: mechanism; sapphire; sige; growth ... See more keywords