Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
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DOI: 10.1039/d1nr06088k
Abstract: Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor nanostructures - including defects. The versatile combination of time, spatial, and spectral resolution of the technique can provide new insights into the physics of carrier… read more here.
Keywords: time; resolved cathodoluminescence; cathodoluminescence; carrier ... See more keywords