Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference
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DOI: 10.3390/en13061421
Abstract: Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power… read more here.
Keywords: gate source; pwm; source voltage; voltage interference ... See more keywords