LAUSR

The authors, report here on the deposition of metallic copper thin films by plasma-assisted atomic layer deposition (ALD) with an air stable and volatile precursor − [Cu((Py)CHCOCF3)2]2 (Py = pyridine) − that stands out due to its facile synthesis and easy handling under ambient conditions. Copper thin films are obtained by decomposing [Cu((Py)CHCOCF3)2]2 in hydrogen plasma in a concomitant deposition and recrystallization process. The thermal stability of the precursor prevents thermally induced decomposition, which allows precise control over thickness and film homogeneity. Electrical measurements of the as-deposited samples show clear interdependence of sheet resistance on the substrates surface roughness, thereby, films with higher roughness show higher resistance. Combined X-Ray photoelectron spectroscopy of Cu 2p peak and Cu LMM peak, as well as resistivity values of 58 Ω □−1 confirm the high quality of copper films without the need of further annealing steps under reducing atmosphere.