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This work shows the large‐area growth of high‐quality vertically aligned PtSe 2 , and its application to photodetectors based on PtSe 2 ‐GaAs heterojunctions which exhibit a broadband sensitivity to… Click to show full abstract
This work shows the large‐area growth of high‐quality vertically aligned PtSe 2 , and its application to photodetectors based on PtSe 2 ‐GaAs heterojunctions which exhibit a broadband sensitivity to illumination ranging from deep ultraviolet to near‐infrared light, with a peak sensitivity in the region from 650 to 810 nm. The high‐performance broadband photodetector will develop the next‐generation 2D Group‐10 materials based optoelectronic devices.
Keywords:
self driven;
vertically aligned;
broadband photodetector;
fast self
Journal Title: Advanced Functional Materials
Year Published: 2018
Link to full text (if available)
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Journal Title: Advanced Functional Materials
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!