LAUSR

Low-voltage operation and fast switching ability are necessary for wearable electronic devices. Recently, electrolyte dielectric materials have been widely used to decrease driving voltages; however, they often exhibit unwanted doping effects and power dissipation problems. Here, a method for dramatically lowering driving voltages is reported in organic electronics via source-gated transistor (SGT) structures. SGTs are fabricated by evaporating asymmetric metals with different work functions for the source and drain electrodes. Versatile organic semiconductor-based SGTs demonstrate a significantly lower drain voltage (<10 V) for the saturation regime compared to that of typical field-effect transistors with the same dielectric layer (>80 V). Furthermore, coating reduced Pyronin B (rPyB) onto n-type SGTs decreases the threshold voltage from 51.2 to 0.1 eV and improves air-stability, exhibiting a maintained electron mobility (>90%) for 40 d. The air-stability is due to both the energetic and kinetic factors, including a decreased lowest unoccupied molecular orbital level of the n-type semiconductor after doping and covering the active layer with rPyB. Finally, flexible SGTs are fabricated on a Parylene-C substrate that shows highly stable operation in a bending test. The results demonstrate a promising technology for low-power, flexible electronic devices via electrode engineering.