LAUSR

Crystalline silicon (c‐Si) solar cells featuring carrier‐selective passivating contacts have become a prominent path to develop highly efficient photovoltaic devices. Development of electron‐selective materials that can provide excellent surface passivation and low contact resistivity to c‐Si substrates while presenting good environmental stability is crucial for practical implementation. Here, an easy approach is demonstrated to achieve low resistivity Ohmic contacts between slightly doped n‐type c‐Si and aluminum electrodes via simple spin‐coating of metal acetylacetone (MAcac) film on a c‐Si surface. Contact resistivity of 1.3 mΩ cm2 (18.2 mΩ cm2 with an a‐Si:H(i) passivating layer) is realized when a thin calcium acetylacetone (CaAcac) interlayer is introduced between c‐Si and Al. An n‐Type c‐Si solar cell with a full area rear a‐Si:H(i)/CaAcac/Al electron‐selective contact is demonstrated with a power conversion efficiency of 21.6%. This work not only demonstrates an approach to develop highly efficient n‐type c‐Si solar cells with effective electron‐selective passivating contacts, but also contributes toward accomplishing a simplified fabrication process for photovoltaic devices, from vacuum to solution processing.