LAUSR

Semiconducting photoresists hold great promise for scale‐up manufacturing of organic field‐effect transistors (OFETs) for integrated organic electronics. While photolithographic p‐type OFETs have achieved a considerable balance among patterning precision, electrical properties and process stability, it remains challenging for n‐type OFETs due to the inherent limited mobility and ambient instability. Herein, a n‐type semiconducting photoresist (SPr) is developed that is compatible with photolithography procedures. By utilizing the solvent‐driven force, a self‐encapsulated blend film with gradient semiconductor phase is prepared, where the underneath transistor active layer is protected by the upper cross‐linked network, avoiding solvent erosion and air doping. As such, a mobility up to 1.1 cm2 V−1 s−1 that is comparable with amorphous Si is achieved, with remained mobility by ≈90% after long‐term exposure to developer and stripper or atmospheric conditions. The sub‐micrometer patterning accuracy of SPr enables the fabrication of organic transistor arrays with a density of 9 × 105 units cm−1, which is comparable to other state‐of‐the‐art devices fabricated by the printing or photolithography, demonstrating immense potential in integrated organic electronics.