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A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of… Click to show full abstract
A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of the WSe2(1-x) Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.
Keywords:
transition;
monolayer;
semiconductor;
wse2 te2x;
metal
Journal Title: Advanced materials
Year Published: 2017
Link to full text (if available)
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Journal Title: Advanced materials
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!