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The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111)… Click to show full abstract
The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
Keywords:
topological crystalline;
pb1 snx;
giant rashba;
rashba splitting;
snx 111
Journal Title: Advanced materials
Year Published: 2017
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Journal Title: Advanced materials
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!