A tenfold improvement in the external electroluminescence quantum efficiency of NIR electrophosphorescence is demonstrated compared to devices with conventional fluorescent materials as host, by applying the concept of thermally activated… Click to show full abstract
A tenfold improvement in the external electroluminescence quantum efficiency of NIR electrophosphorescence is demonstrated compared to devices with conventional fluorescent materials as host, by applying the concept of thermally activated delayed fluorescence to achieve an emitter layer capable of efficient spin conversion. This device architecture can maximize the performance of an organic-semiconductor-based NIR light source.
               
Click one of the above tabs to view related content.