LAUSR

Although substrates play an important role upon crystallization of supercooled liquids, the influences of surface temperature and thermal property have remained elusive. Here, the crystallization of supercooled phase-change gallium (Ga) on substrates with different thermal conductivity is studied. The effect of interfacial temperature on the crystallization kinetics, which dictates thermo-mechanical stresses between the substrate and the crystallized Ga, is investigated. At an elevated surface temperature, close to the melting point of Ga, an extended single-crystal growth of Ga on dielectric substrates due to layering effect and annealing is realized without the application of external fields. Adhesive strength at the interfaces depends on the thermal conductivity and initial surface temperature of the substrates. This insight can be applicable to other liquid metals for industrial applications, and sheds more light on phase-change memory crystallization.