LAUSR

Redox-based resistive random access memories (ReRAM) are based on electrochemical redox processes at the electrode/electrolyte interfaces. The selection of materials and materials combinations strongly influence the related nanoscale interfacial processes, thus playing a crucial role in resistive switching properties and functionalities. To date, however, comprehensive study on device design accounting for combination of factors such as electrodes, electrolytes and capping layer materials related to their thicknesses and interactions, which determines the interfacial redox processes are scarce. In this work, we report on the impact of materials' configuration on interfacial redox reactions in HfO2 based electrochemical metallization memory (ECM) and valence change memory (VCM) systems. The redox processes are studied through cyclic voltammetry, and the corresponding resistive switching characteristics are investigated. In ECM cells the overall cell resistance depends on the electrocatalytic activities of counter electrode. Nonetheless, the material of capping electrode further influences the cell resistance and affects the SET and RESET voltages. In VCM system the influence of electrode material configuration is also pronounced, and is capable of modulating the active resistive switching interface. For both types of memory cells the switching behavior changes significantly with variation of oxide thickness. Our results present important materials selection criteria for rationale design of ReRAM cells for various memrsitive applications. This article is protected by copyright. All rights reserved.