The number of publications on perovskite solar cells (PSC) continues to grow exponentially. Although the efficiency of PSC is exceeded 25.5%, not every research laboratory can reproduce this result or… Click to show full abstract
The number of publications on perovskite solar cells (PSC) continues to grow exponentially. Although the efficiency of PSC is exceeded 25.5%, not every research laboratory can reproduce this result or even pass the border of 20%. Unfortunately, it is not always clear which dominating mechanism is responsible for the performance drop. Here, we develop a simple method of light intensity analysis of JV parameters allowing the understanding what are the mechanisms appearing in the solar cell and limiting device performance. The developed method is supported by the drift-diffusion model and aimed to help in the explanation of the parasitic losses from the interface or bulk recombination, series, or shunt resistance in the perovskite solar cell. This method can help not only point on the dominating of bulk or interface recombination in the devices but also determine which interface is more defective. The detailed and stepwise guidance for such a type of light intensity analysis of JV parameters is provided. The proposed method and the conclusions of this study are supported by a series of case studies, showing the effectiveness of the proposed method on real examples. This article is protected by copyright. All rights reserved.
               
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