LAUSR

Despite the fact that antimony triselenide (Sb2 Se3 ) thin-film solar cell has undergone rapid development in recent years, the large open-circuit voltage (VOC ) deficit still remains to be the biggest bottleneck as even the world record device suffers from a large VOC deficit of 0.59 V. Here, an effective interface engineering approach is reported where the Sb2 Se3 /CdS heterojunction (HTJ) was subjected to a post-annealing treatment using rapid thermal process. It was found that non-radiative recombination near the Sb2 Se3 /CdS HTJ including interface recombination and space charge region recombination were greatly suppressed after the HTJ annealing treatment. Ultimately, a substrate Sb2 Se3 /CdS thin-film solar cell with a competitive power conversion efficiency of 8.64% and a record VOC of 0.52 V has been successfully fabricated. The device exhibits a much mitigated VOC deficit of 0.49 V, which is lower than that of any other reported efficient antimony chalcogenide solar cell. This article is protected by copyright. All rights reserved.