LAUSR

The development of floating gate nonvolatile memory is limited by the charge storage, retention and transfer ability of the charge-trapping layer. Here we demonstrate that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, the insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as excellent charge storge layer and photosensitive layer. The optoelectronic memory composed of a MoS2 /hBN/2D-RPP (MBR) van der Waals heterostructure was demonstrated for the first time. The MBR device exhibits unique light-controlled charge storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 104 , negligible degeneration over 103 s, >1000 program/erase cycles and write speed of 500 μs. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit was as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge storage medium in floating gate memory, but also provides an effect strategy towards fast, low-power and stable optical multi-bit storage and neuromorphic computing. This article is protected by copyright. All rights reserved.