LAUSR

Within the last decade, considerable efforts have been devoted to the fabrication of transistors utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been demonstrated, including inverters, ring oscillators, and SRAM cells. However, for industrial applications, both time-zero and time-dependent variability in the performance of the transistors appear critical. While time-zero variability is primarily related to immature processing, time-dependent drifts are dominated by charge trapping at defects located at the channel/insulator interface and in the insulator itself, which can substantially degrade the stability of circuits. At the current state of the art, 2D transistors typically exhibit a few orders of magnitude higher trap densities than silicon devices, which considerably increases their time-dependent variability, resulting in stability and yield issues. Here, the stability of currently available 2D electronics is carefully evaluated using circuit simulations to determine the impact of transistor-related issues on the overall circuit performance. Our results suggest that while the performance parameters of transistors based on certain material combinations are already getting close to being competitive with Si technologies, a reduction in variability and defect densities is required. Overall, our criteria for parameter variability serve as guidance for evaluating the future development of 2D technologies. This article is protected by copyright. All rights reserved.