LAUSR

The hybrid field-effect transistor (HyFET) superior for power electronic applications can be created by harnessing the merits of two representative wide-bandgap semiconductors, GaN and SiC. Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially grown on a conventional 4° off-axis 4H-SiC substrate and manifests its high quality and suitability for constructing GaN-based high electron mobility transistors (HEMTs), thereby suggesting a practical approach to realizing the HyFET. In the meanwhile, a distinct two-step biaxial strain relaxation process is proposed and studied with comprehensive characterizations. This article is protected by copyright. All rights reserved.