Healing charge-selective contact interfaces in perovskite solar cells (PSCs) highly determines the power conversion efficiency (PCE) and stability. However, the state-of-the-art strategies are often static by one-off forming a functional… Click to show full abstract
Healing charge-selective contact interfaces in perovskite solar cells (PSCs) highly determines the power conversion efficiency (PCE) and stability. However, the state-of-the-art strategies are often static by one-off forming a functional interlayer, which delivers fixed interfacial properties during the subsequent operation. As a result, the in-service formed defects will gradually deteriorate the photovoltaic performances. Herein, we present a dynamic healing interface (DHI) by incorporating a low-melting-point small molecule onto perovskite film surface for highly efficient and stable PSCs. Arising from the reduced non-radiative recombination, the DHI boosts a PCE to 12.05% for all-inorganic CsPbIBr2 solar cell and 14.14% for CsPbI2 Br cell as well as 23.37% for FA0.92 MA0.08 PbI3 (FA = formamidinium, MA = methylammonium) cell. The solid-to-liquid phase conversion of DHI at elevated temperature causes a longitudinal infiltration into the bulk perovskite film to maximize the charge extraction, passivate defects at grain boundaries and suppress ion migration. Furthermore, the stability is remarkably enhanced under air, heat, and persistent light irradiation conditions, paving a universal strategy for advanced perovskite-based optoelectronics. This article is protected by copyright. All rights reserved.
               
Click one of the above tabs to view related content.