LAUSR

Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand require an improved interconnect capacities in terms of bandwidth density and active tunability for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offers a solution for existing inter/intra chip bandwidth density and energy efficiency bottleneck. Here, we present a low-loss terahertz topological interconnect-cavity system that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultra-high-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 50 dB modulation. We further demonstrate the dynamic control of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflections. The on-chip topological cavity is CMOS-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultra-high-Q cavity also paves the path for designing topological lasers, quantum circuits, and nonlinear topological photonics. This article is protected by copyright. All rights reserved.