LAUSR

Organic electrochemical transistors (OECTs) have recently emerged as a feasible candidate to realize the next generation of printable electronics. Especially, their chemical versatility and the unique redox‐based operating principle have provided new possibilities in high‐functioning logic circuitry beyond the traditional binary Boolean logic. Here, a simple strategy to electrochemically realize monolithic multi‐valued logic transistors is presented, which is one of the most promising branches of transistor technology in the forthcoming era of hyper Moore's law. A vertically stacked heterogeneous dual‐channel architecture is introduced with a patterned reference electrode, which enables a facile manifestation of stable and equiprobable ternary logic states with a reduced transistor footprint. The dual‐ion‐penetration mechanism coupled with ultrashort vertical channel even allows a very‐high accessing frequency to multiple logic states reaching over 10 MHz. Furthermore, printed arrays of ternary logic gates with full voltage swing within 1 V are demonstrated.