LAUSR

An alternative to charge‐based electronics identifies the spin degree of freedom for information communication and processing. The long spin‐diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field‐effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge‐based FETs is compared to highlight their prospects for low‐power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.