LAUSR

HfOx‐based memristor has been studied extensively as one of the most promising memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities. However, the resistive switching mechanism, relying on the formation and rupture of conductive filaments (CFs) during device operations, is still under debate. In this work, the CFs with different morphologies after different operations—forming, set, and reset—are clearly revealed for the first time by 3D reconstruction of conductive atomic force microscopy (c‐AFM) images. Intriguingly, multiple CFs are successfully observed in HfOx‐based memristor devices with three different resistive states. CFs after forming, set, and reset exhibit the typical morphologies of hourglass, inverted‐cone, and short‐cone, respectively. The rupture location of CFs after the reset operation is also observed clearly. These findings reveal the microscopic behaviors underlying the resistive switching, which could pave the road to design and optimize oxide‐based memristors for both memory and computing applications.