LAUSR

Recently, scalable production of large-area graphene films on metal foils with promising qualities has been successfully achieved by eliminating grain boundaries, wrinkles and adlayers. The transfer of graphene from growth metal substrates onto functional substrates remains one inescapable obstacle on the road to the real commercial applications of CVD graphene films. Current transfer methods still require time-consuming chemical reactions, which hinders its mass production, and produces cracks and contamination that strongly impede performance reproducibility. Therefore, graphene transfer techniques with fine intactness and cleanness of transferred graphene, and improved production efficiency would be ideal for the mass production of graphene films on destination substrates. Herein, through the engineering of interfacial forces enabled by sophisticated design of transfer medium, we realize the crack-free and clean transfer of 4-inch-sized graphene wafers onto silicon wafers within only 15 min. The reported transfer method is an important leap over the long-lasting obstacle of the batch-scale graphene transfer without degrading the quality of graphene, bringing the graphene products close to the real applications. This article is protected by copyright. All rights reserved.