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DOI: 10.1002/adom.201701348 transparency.[7–10] However, the shortages of intrinsic sensitivity to acid and heat, the low storage of indium on earth, and intrinsic mechanical brittleness have impeded its application in OLEDs, especially flexible OLEDs. For the purpose to replace ITO electrodes, other transparent conductive materials such as metallic films,[11–13] metal nanowires,[14–16] conducting polymers,[17–19] carbon nanotubes,[20–23] and graphene[24–27] have been widely investigated. Among them, 2D material of graphene is one of the most promising materials for a flexible transparent electrode because of its high transparency, excellent electrical conductivity, mechanical stability, and ultrahigh carrier mobility.[28–33] Microscale patterning of the graphene is a necessary and urgent demand for the use of the graphene as electrodes in the optoelectronic devices, such as fieldeffect transistors, printed electronics, and high-resolution display.[34–36] Up to now, there are a number of methods for microscale patterning of the graphene. Nanoscalepatterned graphene can be directly tailored by focused ion beam without any mask, but it is not an extensive pattern method due to its low processing efficiency for large-area patterns.[37,38] Graphene based inks for direct inkjet printing of graphene patterns is another option with properties of large-scale fabrication and high resolution. Unfortunately, thin graphene inks films consist of nanoscale to microscale graphene flakes exhibit relatively low conductivity due to its discontinuous large-area framework compared with chemical vapor deposition (CVD) grown graphene.[39,40] Patterned CVD-grown graphene can be obtained by prepatterning of catalytic metal on insulation substrates, while the patterned catalytic metal suffers from deformation after the high-temperature treatment which influence the profile of the patterned graphene. Besides that, complicated and time consuming transfer processes afterward is needed to transfer the patterned graphene to the desired substrate by using a supporting layer for its further application.[41,42] Conventional photolithography combined with plasma etching is another method for microscale patterning of the CVD-grown graphene.[43–46] In this case, the transfer process is needed before the lithography patterning. Poly methyl methacrylate/methacrylic acid (PMMA) is the most commonly used (Supporting Information), but always caused polymer residue.[47,48] The two separate steps of the patterning and transfer with different materials used Graphene grown by chemical vapor deposition has attracted much attention in optoelectronic application due to its great potential as a large-area 2D electrode material. However, the clean transfer and effective microscale patterning of graphene still remain great challenges for its use as the electrode in the optoelectronic devices. In this paper, a simple and reliable transfer-pattern strategy is developed for the microscale-patterned graphene electrode by using a photoresist as both supporting layer for the graphene transfer and photolithographic mask layer. The microscale-patterned graphene electrodes transferred onto the desired substrates exhibit low surface roughness of 0.675 nm and mean sheet resistance of 444 Ω ◽−1. 25 μm line width patterned organic light-emitting devices (OLEDs) arrays with high precision and uniform lighting area have proved the great potential of the transfer-pattern strategy for high-resolution OLEDs. Flexible and efficient OLEDs based on patterned graphene anodes can be realized by this strategy. Moreover, a scale of ≈2 in. patterned graphene well demonstrates the feasibility of the transfer-pattern strategy for large-area fabrication of the microscale-patterned graphene.