At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This… Click to show full abstract
At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS2/InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi‐layered MoS2 with InGaAs‐based high electron mobility transistors (InGaAs‐HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 105 A W–1 under near‐infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS2/InAlAs/InGaAs n–i–n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 105 A W–1 to ‐4 × 105 A W–1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS2/InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.
               
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