LAUSR

Artificial synapses have shown great potential in the research of artificial intelligence and brain‐like computing. Artificial synaptic devices based on vertical organic field‐effect transistors (VOFETs) exhibit shorter carrier transmission distances and more stable source–drain currents than conventional planar organic transistors due to their smaller channel lengths. By taking advantage of the vertical structure, low working voltage can be achieved. Here, vertical synaptic devices with working voltage as low as 10 µV and ultra‐low power consumption (≈1.3 fJ per spike) are proposed. VOFET‐based artificial photonic synaptic devices can successfully simulate typical synaptic behavior, including excitatory post‐synaptic current, short‐term plasticity, and long‐term plasticity. Furthermore, VOFET arrays are demonstrated to enable image contrast enhancement function. This work provides a new approach for the realization of artificial synapses through a simple manufacturing process.