Metal halide perovskites having high defect tolerance, high absorption characteristics, and high carrier mobility demonstrate great promise as potential light harvesters in photovoltaics and optoelectronics and have experienced an unprecedented… Click to show full abstract
Metal halide perovskites having high defect tolerance, high absorption characteristics, and high carrier mobility demonstrate great promise as potential light harvesters in photovoltaics and optoelectronics and have experienced an unprecedented development since their occurrence in 2009. Semiconductor quantum dots (QDs), on the other hand, have also been proved to be very flexible toward shape, dimension, bandgap, and optical properties for constructing optoelectronic devices. Of late, a strategic combination of both materials has demonstrated extraordinary promise in photovoltaic applications and optoelectronic devices. Combining QDs and perovskites has proved to be quite an effective strategy toward the formation of pinhole‐free and more stable perovskite crystals along with tunability of other properties. To boost this exciting research field, it is imperative to summarize the work done so far in recent years to provide an intriguing insight. This review is a critical account of the advanced strategy toward combining these two fascinating materials, including their different synthetic approaches regarding heteroepitaxial growth of perovskite crystals on QDs, carrier dynamics at the interface and potential application in the field of solar cells, light emitting diodes, and photodetectors.
               
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